EPC Space Unveils Radiation-Hardened GaN Power Stage Integrated Circuit Designed for Satellite Power Architectures
EPC Space Unveils 50 V, 6 A Rad Hard GaN Power Stage IC for Space Applications
EPC Space has unveiled its new 50 V, 6 A Radiation-Hardened GaN Power Stage Integrated Circuit, the EPC7011L7SH, specifically crafted for utilization within the rigors of space environments. This innovative single-chip solution combines a driver and an eGaN FET half-bridge power stage, all compactly packaged within an Aluminum Nitride ceramic surface mount technology casing. Through EPC’s unique GaN IC technology, the EPC7011L7SH integrates a comprehensive array of features, including input logic interface, level shifting, bootstrap capacitor, and gate drive buffer circuits. Together with the eGaN output FETs arranged in a half-bridge configuration, this monolithic chip boasts rapid switching capabilities that exceed 2 MHz.
The adoption of IC products integrating GaN technology empowers designers with significant performance enhancements - a simplification in chip implementation, streamlined layout and assembly processes, reduced PCB space requirements, and improved energy efficiency are just a few of the benefits.
Bel Lazar, CEO of EPC Space, asserts, "Our Rad Hard GaN-on-silicon integration not only condenses the performance envelope but also satisfies all exigent radiation hardness specifications for spaceborne systems."
The EPC7011L7SH represents the forerunner of an expansive lineup of space-grade Rad Hard ICs scheduled for release by EPC and EPC Space commencing this year. These Rad Hard ICs herald a transformative progression in Rad Hard GaN power conversion, transitioning from discrete device integration to sophisticated architectures that offer superior in-circuit performance compared to traditional silicon solutions while simplifying the design process for power system engineers.
Typical applications for the EPC7011L7SH span from single and multi-phase motor controllers used in reaction wheel assemblies (RWAs) to robotic actuators and point of load converters.
Key Features:
- Highly Integrated: Combines driver and eGaN FETs in a compact Aluminum Nitride ceramic surface mount package.
- Simplified Design: Eliminates the need for discrete components, reducing board size and complexity.
- High Performance: Enables high-speed switching (2+ MHz) and improved efficiency compared to silicon.
- Radiation Hardened: Meets all radiation hardness requirements for space applications.
Benefits for Designers:
- Faster Design Cycles: Easy-to-use integrated solution streamlines design and development.
- Reduced Board Space: Smaller package saves valuable PCB real estate.
- Enhanced Performance: Achieves higher efficiency and power density than silicon alternatives.
- Radiation Reliability: Ensures stable operation in harsh space environments.
Ideal Applications:
- Single and multi-phase motor drivers for reaction wheel assemblies (RWAs)
- Robotic actuators
- Point-of-load converters
“Integrated Rad Hard GaN-on-silicon offers superior performance in a smaller footprint while meeting critical space-grade requirements,” says Bel Lazar, EPC Space CEO. “The EPC7011L7SH represents a major step forward in simplifying GaN technology for space applications.”
The EPC7011L7SH is part of a growing family of Rad Hard GaN ICs from EPC Space. As a leading authorized distributor of EPC products, BonChip Electronics offers the full line of Rad Hard GaN solutions, including the EPC7011L7SH. We provide expert technical support, competitive pricing, and fast delivery to meet your space exploration needs.
Contact BonChip Electronics today to learn more about the EPC7011L7SH and explore your space-grade GaN options!
https://www.bonchip.com/product/EPCSpace/EPC7011L7SH.html
