NVD5803NT4G Zolemba za Tech

Power MOSFET 40V, 85A, 5.7 mOhm, Single N-Channel, DPAK.

Mtundu wa Zamalonda Mtengo wa Makhalidwe
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 83W
Turn On Delay Time 12.6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 85A Tc
Rise Time 21.4ns
Vgs (Max) ±20V
Turn-Off Delay Time 28.3 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Radiation Hardening No
Lead Free Lead Free
Mtundu wa Zamalonda Mtengo wa Makhalidwe
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.7m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 6.6 ns
Continuous Drain Current (ID) 85A
Drain-source On Resistance-Max 0.0057Ohm
Pulsed Drain Current-Max (IDM) 228A
RoHS Status ROHS3 Compliant
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