NSVBC114EDXV6T1G Zolemba za Tech

TRANS 2NPN BIAS BIPOLAR SOT563

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Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Mount Surface Mount
Package / Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Subcategory BIP General Purpose Small Signal
Number of Elements 2
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 250mV
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Resistor - Base (R1) 10k Ω
RoHS Status ROHS3 Compliant
Mtundu wa Zamalonda Mtengo wa Makhalidwe
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Transistor Element Material SILICON
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 500mW
Power - Max 500mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Resistor - Emitter Base (R2) 10k Ω
Lead Free Lead Free
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Gawo # Wopanga Gulu Kupezeka
NSVBC114EDXV6T1G AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Arrays, Pre-Biased 8344
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NSVBC114EPDXV6T1G ON Semiconductor BJT Transistors Arrays
NSVBC114EPDXV6T1G IC AMI Semiconductor / ON Semiconductor Specialized Hot ICs 4268
NSVBC114YDXV6T1G AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Arrays, Pre-Biased 2543
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NSVBC114YPDXV65G ON Semiconductor BJT Transistors Arrays
NSVBC114YPDXV6T1G AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Arrays, Pre-Biased 2747
NSVBC114YPDXV6T1G ON Semiconductor BJT Transistors Arrays

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