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HGTG30N60B3 Zolemba za Tech

HGTG30N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 208W
Base Part Number HGTG30N60
Polarity NPN
Power Dissipation 208W
Input Type Standard
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Test Condition 480V, 30A, 3 Ω, 15V
Continuous Collector Current 60A
Gate Charge 170nC
Td (on/off) @ 25°C 36ns/137ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 150ns
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Current Rating 60A
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Max Collector Current 60A
Collector Emitter Saturation Voltage 1.45V
Turn On Time 56 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn Off Time-Nom (toff) 365 ns
Current - Collector Pulsed (Icm) 220A
Switching Energy 500μJ (on), 680μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 20.82mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
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Ena akuphatikizapo   "HGTG3"   magawo

Magawo otsatirawa akuphatikizapo  'HGTG3' 

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