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FDMS86500DC Zolemba za Tech

FDMS86500DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Weight 90mg
Operating Temperature -55°C~150°C TJ
Published 2010
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PDSO-F5
Number of Channels 1
Element Configuration Single
Power Dissipation 3.2W
Turn On Delay Time 35 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 29A Ta 108A Tc
Rise Time 25ns
Vgs (Max) ±20V
Turn-Off Delay Time 34 ns
JEDEC-95 Code MO-240AA
Drain Current-Max (Abs) (ID) 60A
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Length 5.1mm
Radiation Hardening No
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Dual Cool™, PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form FLAT
Number of Elements 1
Power Dissipation-Max 3.2W Ta 125W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3m Ω @ 29A, 10V
Input Capacitance (Ciss) (Max) @ Vds 7680pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Fall Time (Typ) 8.2 ns
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0023Ohm
Pulsed Drain Current-Max (IDM) 200A
Height 1.05mm
Width 5.85mm
RoHS Status ROHS3 Compliant
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Ena akuphatikizapo   "FDMS8"   magawo

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