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2N3055AG Zolemba za Tech

2N3055AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~200°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 115W
Terminal Form PIN/PEG
Current Rating 15A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 2
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 6MHz
Transistor Type NPN
Max Collector Current 15A
Current - Collector Cutoff (Max) 700μA
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1.1V
Emitter Base Voltage (VEBO) 7V
Height 26.67mm
Width 8.509mm
REACH SVHC No SVHC
Lead Free Lead Free
Mtundu wa Zamalonda Mtengo wa Makhalidwe
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case TO-204AA, TO-3
Number of Pins 2
Transistor Element Material SILICON
Packaging Tray
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Frequency 6MHz
Base Part Number 2N3055
Number of Elements 1
Power Dissipation 115W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 4A 2V
Vce Saturation (Max) @ Ib, Ic 5V @ 7A, 15A
Transition Frequency 0.8MHz
Collector Base Voltage (VCBO) 200V
hFE Min 10
Length 39.37mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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