IRF9540NPBF Zolemba za Tech

IRF9540NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC -100V
Peak Reflow Temperature (Cel) 250
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 23A Tc
Rise Time 67ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 51 ns
Continuous Drain Current (ID) -23A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage -100V
Dual Supply Voltage -100V
Nominal Vgs -4 V
Length 10.5156mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 1998
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 117mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Current Rating -23A
Lead Pitch 2.54mm
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 117m Ω @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 97nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Turn-Off Delay Time 51 ns
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 76A
Recovery Time 220 ns
Height 15.24mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Lead Free
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